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液晶相位调控器件的高功率激光应用相关问题

刘晓凤 赵元安 彭丽萍 汪小双 李大伟 邵建达

刘晓凤, 赵元安, 彭丽萍, 汪小双, 李大伟, 邵建达. 液晶相位调控器件的高功率激光应用相关问题[J]. 仁和测试, 2020, 32(3): 032003. doi: 10.11884/HPLPB202032.190426
引用本文: 刘晓凤, 赵元安, 彭丽萍, 汪小双, 李大伟, 邵建达. 液晶相位调控器件的高功率激光应用相关问题[J]. 仁和测试, 2020, 32(3): 032003. doi: 10.11884/HPLPB202032.190426
Xiaofeng Liu, Yuan’an Zhao, Liping Peng, Xiaoshuang Wang, Dawei Li, Jianda Shao. Application problems of liquid crystal phase modulators to high power lasers[J]. Rhhz Test, 2020, 32(3): 032003. doi: 10.11884/HPLPB202032.190426
Citation: Xiaofeng Liu, Yuan’an Zhao, Liping Peng, Xiaoshuang Wang, Dawei Li, Jianda Shao. Application problems of liquid crystal phase modulators to high power lasers[J]. Rhhz Test, 2020, 32(3): 032003. doi: 10.11884/HPLPB202032.190426

液晶相位调控器件的高功率激光应用相关问题

doi: 10.11884/HPLPB202032.190426
基金项目: 国家自然科学基金项目(11874369,11774319);脉冲功率激光技术国家重点实验室开放基金项目
详细信息
    作者简介:

    刘晓凤(1982—), 女,博士,副研究员,从事激光辐照效应与机理研究;liuxiaofeng@siom.ac.cn

  • 中图分类号: O436

Application problems of liquid crystal phase modulators to high power lasers

  • 摘要: 液晶相位调控器件在聚变点火、激光加工、光电对抗、激光雷达、激光通讯、激光防护等高功率激光领域有着非常广泛的应用及应用前景。但受限于构成器件材料自身抗激光损伤能力的限制以及缺乏对高功率激光辐照下液晶相位调控器件相位调控性能退化及损伤特性的系统研究,目前液晶相位调控器件的激光耐受力还难以满足高功率激光系统的应用和发展需求。为指导高激光耐受力液晶相位调控器件的制备工艺优化,对液晶相位调控器件在高峰值和高平均功率激光应用下出现的损伤现象以及性能退化进行了综述,最后对液晶相位调控器件激光耐受力提升方法做了总结和归纳。
  • 图  1  阈值附近ITO的典型损伤形貌,其中(b),(c)(d)分别对应(a)中1,2,3所示的方框位置

    Figure  1.  Typical damage morphology of ITO/glass at a lower fluence (near the LIDT). (b), (c), and (d) show local magnified views of micro-areas outlined by the rectangles 1, 2, and 3 in (a), respectively

    图  2  ITO薄膜在100%损伤几率能流下的典型损伤形貌及损伤深度

    Figure  2.  Typical damage morphology and depth profile of the ITO/glass sample at a higher fluence (near 100% damage probability)

    图  3  PI/ITO薄膜的典型损伤形貌

    Figure  3.  Typical damage morphologies of the PI/ITO/glass sample

    图  4  高峰值功率激光辐照下,ITO和PI薄膜的温度场分布

    Figure  4.  Temperature distribution of the irradiated center in the samples. The dashed lines represent the vaporization temperature of the ITO film

    图  5  高平均功率激光辐照下,液晶光学器件相位特性变化的检测原理图[35]

    Figure  5.  Schematic diagram of measuring phase modulation of the liquid crystal device induced by the high-average-power laser[35]

    图  6  连续激光辐照功率141 W/cm2 下降到133 W/cm2的过程中,偏光显微镜下观察到器件内部液晶材状态的变化[35]

    Figure  6.  Morphologies observed by the polarized light microscope for decrease in the laser power density from 141 W/cm2 to 133 W/cm2

    图  7  不同功率密度激光辐照液晶器件的过程中,通过检偏器的He-Ne透射光强度随液晶器件加载电压的变化[36]

    Figure  7.  Transmitted He-Ne light intensity after the analyzer varies with voltage apllied on the liquid crystal device when the liquid crystal device is irridiated by different laser power densities [36]

    图  8  不同功率密度激光辐照下的损伤形貌

    Figure  8.  Damage morphologies induced by different power densities

    图  9  3 000 W/cm2 激光辐照下,30 s内ITO/PI样品的纵向温度变化

    Figure  9.  Vertical temperature distribution in first 30 s under 3 000 W/cm2 laser irradiation

    图  10  通过检偏后的探测光归一化透过率模拟结果和实测结果[37]

    Figure  10.  Simulation and measurement results of the normalized ransmitted power of the probe laser after the analyzer[37]

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出版历程
  • 收稿日期:  2019-11-13
  • 修回日期:  2020-01-06
  • 刊出日期:  2020-03-17

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